Abstract Submission Guidelines
Please use the following template when preparing your extended abstract. Abstracts should be 2-3 pages in length. A cover page must include the name, address, telephone number, and e-mail address of the contact author. Please be sure also to include a list of 3-6 key words in the appropriate section at the end of the abstract. Your abstract should include at least one figure and/or table presenting data. If accepted, your abstract will appear as-submitted in the final program / extended abstract book. Please note there will be no hardbound conference proceedings this year. E-mail the abstract to Erik Secula, erik.secula@nist.gov no later than December 1, 2020.
Author Notification
Notifications regarding acceptances will be sent via e-mail by December 14, 2020.
Topics
Papers are solicited to address materials and device characterization and metrology for:
- 3D IC Analysis / Metrology
- III-V on Si for Advanced CMOS
- Alternative Gate Dielectrics
- Breakthroughs in Electron Microscopy
- Breakthroughs in Lithography
- Channel Engineering
- CMOS, Extreme CMOS, Beyond CMOS
- Critical Analytical Techniques
- Defects
- Device Manufacturing
- Diagnostics
- Embedded or Buried Interfaces
- Flexible Microelectronics
- Graphene and 2D Materials and Devices
- Heterogeneous Integration
- Hybrid Structures
- In-Situ, Real-Time Control and Monitoring
- Integrated Metrology
- Interconnects
- Internet of Things
- Lab-on-a-Chip
- Magnetics
- MEMS/NEMS Metrology Applications
- Modeling/Simulation
- More than Moore
- Nanoelectronics Materials and Devices
- Nanoscale Electrical and Optical Measurements
- Non-Destructive Atomic Scale Methods
- Novel Measurement Methods, Breakthroughs
- Organic Electronics
- Reliability
- RAM
- Si Photonics
- Spectroscopic Properties for Novel Materials for Nanoelectronics; Spintronics
- Synchrotron and Neutron Techniques
- Thin-Films; Ultra-Shallow Junctions
- Wafer Manufacturing and New Substrate Materials